Synchrotron radiation multiple diffraction study of Al0.304Ga0.172 In0.524 as MOVPE grown onto InP(001)
Identifieur interne : 018468 ( Main/Repository ); précédent : 018467; suivant : 018469Synchrotron radiation multiple diffraction study of Al0.304Ga0.172 In0.524 as MOVPE grown onto InP(001)
Auteurs : RBID : Pascal:97-0194446Descripteurs français
- Pascal (Inist)
- Etude expérimentale, XRD, Diffraction multiple, Rayonnement synchrotron, Méthode MOVPE, Couche épitaxique, Hétéroépitaxie, Couche épaisse, Paramètre cristallin, Distorsion réseau, Matériau semiconducteur, Composé quaternaire, Aluminium arséniure, Gallium arséniure, Indium arséniure, 6855J, 8115K, Al0,304Ga0,172In0,524As, Al As Ga In, Substrat InP.
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Abstract
Synchrotron radiation multiple diffraction in Renninger scanning (RS) geometry is used to characterise an Al0.304Ga0.172In0.524As hetero-epitaxial layer MOVPE grown onto InP(001).(006) RS data for bulk, InP substrate and the quaternary layer were obtained using a new experimental set-up on station 7.6 at the Daresbury synchrotron radiation source. Examination of the multiple diffraction peak profiles reveal the epitaxial layers to have a higher mosaic spread than the underlying substrate materials. Measurements of the layer parallel lattice parameter a∥= 5.8755 ± 0.0003 Å, as deduced from the tetragonal distortion measured at the 6-beam case in the layer RS, agrees very well with that obtained from the ? ? 222 intensity modulation on the substrate RS MORSI (modulation on the RS intensity due to the presence of the epilayers. Greenberg and Ladell, Appl. Phys. Lett 50(1957)436), which gives a∥= 5.877 ± 0.002 Å. Simulation of the layer RS using the MULTX program is consistent with a layer normal lattice parameter a⊥= 5.8574 Å in good agreement with the corresponding experimental data.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Synchrotron radiation multiple diffraction study of Al<sub>0.304</sub>Ga<sub>0.172</sub> In<sub>0.524</sub> as MOVPE grown onto InP(001)</title><author><name sortKey="Sasaki, J M" uniqKey="Sasaki J">J. M. Sasaki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre for Molecular and interface Engineering, department of Mechanical and Chemical Engineering, Heriot-Watt University</s1><s2>Edinburgh EH14 4AS</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Edinburgh EH14 4AS</wicri:noRegion></affiliation></author><author><name sortKey="Cardoso, L P" uniqKey="Cardoso L">L. P. Cardoso</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Instituto Fisica "Gleb Wataghin", UNICAMP, CP 6165</s1><s2>13083-970 Campinas, SP</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Castille-La Manche</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Pure and Applied Chemistry, University of Strathclyde</s1><s2>Glasgow G1 1XL</s2><s3>GBR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow G1 1XL</wicri:noRegion></affiliation></author><author><name sortKey="Campos, C" uniqKey="Campos C">C. Campos</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Instituto Fisica "Gleb Wataghin", UNICAMP, CP 6165</s1><s2>13083-970 Campinas, SP</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Castille-La Manche</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Pure and Applied Chemistry, University of Strathclyde</s1><s2>Glasgow G1 1XL</s2><s3>GBR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Glasgow G1 1XL</wicri:noRegion></affiliation></author><author><name sortKey="Roberts, K J" uniqKey="Roberts K">K. J. Roberts</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre for Molecular and interface Engineering, department of Mechanical and Chemical Engineering, Heriot-Watt University</s1><s2>Edinburgh EH14 4AS</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Edinburgh EH14 4AS</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>CCLRC Daresbury Laboratory</s1><s2>Warrington WA4 4AD</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>CCLRC Daresbury Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="Clark, G F" uniqKey="Clark G">G. F. Clark</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>CCLRC Daresbury Laboratory</s1><s2>Warrington WA4 4AD</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>CCLRC Daresbury Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="Pantos, E" uniqKey="Pantos E">E. Pantos</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>CCLRC Daresbury Laboratory</s1><s2>Warrington WA4 4AD</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>CCLRC Daresbury Laboratory</wicri:noRegion></affiliation></author><author><name sortKey="Sacilotti, M A" uniqKey="Sacilotti M">M. A. Sacilotti</name><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>IUT-GMP and LPUB, Université de Bourgogne</s1><s2>21004 Dijon</s2><s3>FRA</s3><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Bourgogne</region><settlement type="city">Dijon</settlement></placeName><orgName type="university">Université de Bourgogne</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0194446</idno><date when="1997">1997</date><idno type="stanalyst">PASCAL 97-0194446 INIST</idno><idno type="RBID">Pascal:97-0194446</idno><idno type="wicri:Area/Main/Corpus">019E64</idno><idno type="wicri:Area/Main/Repository">018468</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term><term>Epitaxial layers</term><term>Experimental study</term><term>Gallium arsenides</term><term>Heteroepitaxy</term><term>Indium arsenides</term><term>Lattice distortion</term><term>Lattice parameters</term><term>MOVPE method</term><term>Multiple diffraction</term><term>Quaternary compounds</term><term>Semiconductor materials</term><term>Synchrotron radiation</term><term>Thick film</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>XRD</term><term>Diffraction multiple</term><term>Rayonnement synchrotron</term><term>Méthode MOVPE</term><term>Couche épitaxique</term><term>Hétéroépitaxie</term><term>Couche épaisse</term><term>Paramètre cristallin</term><term>Distorsion réseau</term><term>Matériau semiconducteur</term><term>Composé quaternaire</term><term>Aluminium arséniure</term><term>Gallium arséniure</term><term>Indium arséniure</term><term>6855J</term><term>8115K</term><term>Al0,304Ga0,172In0,524As</term><term>Al As Ga In</term><term>Substrat InP</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Synchrotron radiation multiple diffraction in Renninger scanning (RS) geometry is used to characterise an Al<sub>0.304</sub>Ga<sub>0.172</sub>In<sub>0.524</sub>As hetero-epitaxial layer MOVPE grown onto InP(001).(006) RS data for bulk, InP substrate and the quaternary layer were obtained using a new experimental set-up on station 7.6 at the Daresbury synchrotron radiation source. Examination of the multiple diffraction peak profiles reveal the epitaxial layers to have a higher mosaic spread than the underlying substrate materials. Measurements of the layer parallel lattice parameter a∥= 5.8755 ± 0.0003 Å, as deduced from the tetragonal distortion measured at the 6-beam case in the layer RS, agrees very well with that obtained from the <sup>?</sup> <sup>?</sup> 222 intensity modulation on the substrate RS MORSI (modulation on the RS intensity due to the presence of the epilayers. Greenberg and Ladell, Appl. Phys. Lett 50(1957)436), which gives a∥= 5.877 ± 0.002 Å. Simulation of the layer RS using the MULTX program is consistent with a layer normal lattice parameter a⊥= 5.8574 Å in good agreement with the corresponding experimental data.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>172</s2></fA05><fA06><s2>3-4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Synchrotron radiation multiple diffraction study of Al<sub>0.304</sub>Ga<sub>0.172</sub> In<sub>0.524</sub> as MOVPE grown onto InP(001)</s1></fA08><fA11 i1="01" i2="1"><s1>SASAKI (J. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>CARDOSO (L. P.)</s1></fA11><fA11 i1="03" i2="1"><s1>CAMPOS (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>ROBERTS (K. J.)</s1></fA11><fA11 i1="05" i2="1"><s1>CLARK (G. F.)</s1></fA11><fA11 i1="06" i2="1"><s1>PANTOS (E.)</s1></fA11><fA11 i1="07" i2="1"><s1>SACILOTTI (M. A.)</s1></fA11><fA14 i1="01"><s1>Centre for Molecular and interface Engineering, department of Mechanical and Chemical Engineering, Heriot-Watt University</s1><s2>Edinburgh EH14 4AS</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Instituto Fisica "Gleb Wataghin", UNICAMP, CP 6165</s1><s2>13083-970 Campinas, SP</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Pure and Applied Chemistry, University of Strathclyde</s1><s2>Glasgow G1 1XL</s2><s3>GBR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>CCLRC Daresbury Laboratory</s1><s2>Warrington WA4 4AD</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="05"><s1>IUT-GMP and LPUB, Université de Bourgogne</s1><s2>21004 Dijon</s2><s3>FRA</s3><sZ>7 aut.</sZ></fA14><fA20><s1>284-290</s1></fA20><fA21><s1>1997</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000063294460020</s5></fA43><fA44><s0>0000</s0><s1>© 1997 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>97-0194446</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Synchrotron radiation multiple diffraction in Renninger scanning (RS) geometry is used to characterise an Al<sub>0.304</sub>Ga<sub>0.172</sub>In<sub>0.524</sub>As hetero-epitaxial layer MOVPE grown onto InP(001).(006) RS data for bulk, InP substrate and the quaternary layer were obtained using a new experimental set-up on station 7.6 at the Daresbury synchrotron radiation source. Examination of the multiple diffraction peak profiles reveal the epitaxial layers to have a higher mosaic spread than the underlying substrate materials. Measurements of the layer parallel lattice parameter a∥= 5.8755 ± 0.0003 Å, as deduced from the tetragonal distortion measured at the 6-beam case in the layer RS, agrees very well with that obtained from the <sup>?</sup> <sup>?</sup> 222 intensity modulation on the substrate RS MORSI (modulation on the RS intensity due to the presence of the epilayers. Greenberg and Ladell, Appl. Phys. Lett 50(1957)436), which gives a∥= 5.877 ± 0.002 Å. Simulation of the layer RS using the MULTX program is consistent with a layer normal lattice parameter a⊥= 5.8574 Å in good agreement with the corresponding experimental data.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15K</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>XRD</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>XRD</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Diffraction multiple</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Multiple diffraction</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Difracción múltiple</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Rayonnement synchrotron</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Synchrotron radiation</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>MOVPE method</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Hétéroépitaxie</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Heteroepitaxy</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Heteroepitaxia</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Couche épaisse</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Thick film</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Capa espesa</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Paramètre cristallin</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Lattice parameters</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Distorsion réseau</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Lattice distortion</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="GER"><s0>Gitterverzerrung</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Distorsión red</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Matériau semiconducteur</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Composé quaternaire</s0><s5>13</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Quaternary compounds</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Aluminium arséniure</s0><s2>NK</s2><s5>14</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>14</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>8115K</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Al0,304Ga0,172In0,524As</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Al As Ga In</s0><s4>INC</s4><s5>93</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Substrat InP</s0><s4>INC</s4><s5>94</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>12</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>12</s5></fC07><fN21><s1>097</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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